型號	探測器材料	探測器材料-底層	光敏尺寸	光敏尺寸-底層	響應波長-峰值	響應度-峰值	響應波長-底層	響應度-底層	封裝	封裝類型	窗口	引腳數
PIN-DSS	Si	Si	?2.54 mm	?2.54 mm	950 nm	0.45A/W	1060 nm	0.12A/W	TO-5	TO	-	4
PIN-DSIN	Si	InGaAs	?2.54 mm	?1.50 mm	950 nm	0.55A/W	1300 nm	0.60A/W	TO-5	TO	-	4
PIN 20157	InGaAs	InGaAs	?2 mm	?2 mm	1550 nm	1A/W	1650 nm	0.15A/W	TO-5	TO	-	4
PIN-DSIN-TEC	Si	InGaAs	?2.54 mm	?1.50 mm	950 nm	0.55A/W	1300 nm	0.60A/W	TO-8	TO	-	8
DSD039039SSB-01	-	-	-	-	-	-	-	-	-	-	-	-
PIN-DSin21	-	-	-	-	-	-	-	-	-	-	-	-
S_IGA-050_030	Si	InGaAs	?5 mm	?3 mm	900 nm	0.5A/W	1300 nm	0.6A/W	TO-8	TO	-	4
UVS/IGA-025/020	Si	InGaAs	?2.5 mm	?2.0 mm	850 nm	0.6A/W	1300 nm	0.6A/W	TO-5	TO	-	4
S/S-025	Si	Si	?2.5 mm	?2.5 mm	850 nm	0.5A/W	1050 nm	0.1A/W	TO-5	TO	-	4
IGA/IGA-020	InGaAs	InGaAs	?2.0 mm	?2.0 mm	1300 nm	0.9A/W	1750 nm	0.05A/W	TO-5	TO	-	4
BICIG17X1.3SIN3.09M	Si	InGaAs	?3 mm	?1.3 mm	880 nm	0.4A/W	1500 nm	0.55A/W	TO-39	TO	-	4
PB25G20209X-Si	Si	PbS	?3 mm	2 × 2 mm	-	-	-	8.0E+05V/W	TO-39	TO	-	4
WS7.56 TO5	Si	Si	2.75 × 2.75 mm	2.75 × 2.75 mm	550 nm	0.2A/W	850 nm	0.45A/W	TO-5	TO	-	3
WS7.56 TO5I	Si	Si	2.75 × 2.75 mm	2.75 × 2.75 mm	550 nm	0.2A/W	850 nm	0.45A/W	TO-5	TO	-	4